vishay siliconix si5456du document number: 64800 s09-0665-rev. a, 20-apr-09 www.vishay.com 1 n-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 20 0.010 at v gs = 10 v 12 9.8 nc 0.0135 at v gs = 4.5 v 12 ordering information: SI5456DU-T1-GE3 (lead (pb)-free and halogen-free) marking code ac xxx lot traceability and date code part # code bottom view powerpak chipfet single d d d g 1 2 8 7 6 5 d d d s 3 4 s n-channel mosfet g d s notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak chipfet is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 90 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 12 a a t c = 70 c 12 a t a = 25 c 12 a, b, c t a = 70 c 10.8 b, c pulsed drain current i dm 50 continuous source-drain diode current t c = 25 c i s 12 a t a = 25 c 2.6 b, c maximum power dissipation t c = 25 c p d 31 w t c = 70 c 20 t a = 25 c 3.1 b, c t a = 70 c 2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 34 40 c/w maximum junction-to-case (drain) steady state r thjc 34 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? gen iii power mosfet ? new thermally enhanced powerpak ? chipfet ? package - small footprint area - low on-resistance - thin 0.8 mm profile ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch ? dc/dc
vishay siliconix si5456du www.vishay.com 2 document number: 64800 s09-0665-rev. a, 20-apr-09 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 21 mv/c v gs(th) temperature coefficient v gs(th) /t j - 4.8 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 12.5v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 ns zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 9.3 a 0.008 0.010 v gs = 4.5 v, i d = 8 a 0.011 0.0135 forward transconductance a g fs v ds = 15 v, i d = 9.3 a 25 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 1200 pf output capacitance c oss 350 reverse transfer capacitance c rss 220 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 14 a 20 30 nc v ds = 10 v, v gs = 4.5 v, i d = 14 a 9.8 15 gate-source charge q gs 3.2 gate-drain charge q gd 3.2 gate resistance r g f = 1 mhz 0.2 1.1 2.2 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1.1 i d ? 9.6 a, v gen = 4.5 v, r g = 1 20 30 ns rise time t r 15 25 turn-off delay time t d(off) 20 30 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1.1 i d ? 9.6 a, v gen = 10 v, r g = 1 10 15 rise time t r 10 15 turn-off delay time t d(off) 20 30 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 12 a pulse diode forward current i sm 30 body diode voltage v sd i s = 9.6 a, v gs = 0 v 0.85 1.2 v body diode reverse recovery time t rr i f = 9.6 a, di/dt = 100 a/s, t j = 25 c 15 30 ns body diode reverse recovery charge q rr 10 20 nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 7
document number: 64800 s09-0665-rev. a, 20-apr-09 www.vishay.com 3 vishay siliconix si5456du typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 4 v v gs =2 v v gs =3 v 0.000 0.004 0.00 8 0.012 0.016 0.020 0 1020304050 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 04 8 12 16 20 i d =14a v ds =16 v v ds =5 v v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 300 600 900 1200 1500 0 5 10 15 20 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =9.3a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
vishay siliconix si5456du www.vishay.com 4 document number: 64800 s09-0665-rev. a, 20-apr-09 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 10 1 100 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0246 8 10 i d =2a;t j = 25 c i d = 2 a; t j = 125 c i d =9.3a;t j = 125 c i d =9.3a;t j = 25 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 30 40 10 20 ) w ( r e w o p time (s) 0 0 0 1 1 0.1 0.01 0 0 1 0 1 1 0 0 . 0 50 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a =25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 64800 s09-0665-rev. a, 20-apr-09 www.vishay.com 5 vishay siliconix si5456du typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 50 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 5 10 15 20 25 30 35 25 50 75 100 125 150 t c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
vishay siliconix si5456du www.vishay.com 6 document number: 64800 s09-0665-rev. a, 20-apr-09 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64800 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 90 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t single p u lse 1 0.1
document number: 73203 www.vishay.com 19-jul-10 1 package information vishay siliconix powerpak ? chipfet ? single pad z d e c a b e h e 2 d 2 k l k 1 e 3 d 3 a 1 s (5) d (6) d (7) d (8) d (1) d (2) d (3) g (4) d (2) d (1) d (3) g (4) d (8) d (7) d (6) s (5) detail z backside view of single pad millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.85 0.028 0.030 0.033 a 1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.15 0.20 0.25 0.006 0.008 0.010 d 2.92 3.00 3.08 0.115 0.118 0.121 d 2 1.75 1.87 2.00 0.069 0.074 0.079 d 3 0.20 0.25 0.30 0.008 0.010 0.012 e 1.82 1.90 1.98 0.072 0.075 0.078 e 2 1.38 1.50 1.63 0.054 0.059 0.064 e 3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 bsc 0.026 bsc h 0.15 0.20 0.25 0.006 0.008 0.010 k 0.25 - - 0.010 - - k 1 0.30 - - 0.012 - - l 0.30 0.35 0.40 0.012 0.014 0.016
www.vishay.com document number: 73203 2 19-jul-10 package information vishay siliconix powerpak ? chipfet ? dual pad z d e c a b e h e 2 l a 1 s2 (5) d2 (6) d1 (7) d1 (8) si (1) gi (2) s2 (3) g2 (4) detail z backside view of dual pad k k 1 g2 (4) d1 (8) d1 (7) d2 (6) d2 (5) s i (1) gi (2) s 2 (3) millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.85 0.028 0.030 0.033 a 1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.15 0.20 0.25 0.006 0.008 0.010 d 2.92 3.00 3.08 0.115 0.118 0.121 d 2 1.07 1.20 1.32 0.042 0.047 0.052 e 1.82 1.90 1.98 0.072 0.075 0.078 e 2 0.92 1.05 1.17 0.036 0.041 0.046 e 0.65 bsc 0.026 bsc h 0.15 0.20 0.25 0.006 0.008 0.010 k 0.20 - - 0.008 - - k 1 0.20 - - 0.008 - - l 0.30 0.35 0.40 0.012 0.014 0.016 ecn: c10-0618-rev. c, 19-jul-09 dw g : 5940
application note 826 vishay siliconix document number: 69948 www.vishay.com revision: 21-jan-08 9 application note recommended minimum pads for powerpak ? chipfet ? single 0.200 (0.00 8 ) recommended minim u m pads dimensions in mm/(inches) 0.225 (0.009) 0.650 (0.026) 0.300 (0.012) 0.350 (0.014) 0.300 (0.012) 0.100 (0.004) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 0.305 (0.012) 2.575 (0.101) 1. 8 70 (0.074) 1.500 (0.059) 1.900 (0.075) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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